Official commissioning of the Works took place in April, 1954. Initially, the Works was designed and built to produce the titan sponge - raw materials for titanium production.And yet two years later the titanium technology was handed over to Zaporozhskij titano-magnievy'j kombinat (ZTMK), and PCMP was targeted on production of semiconductor materials. The first monocrystalline germanium and silicon ingots were made in 1956. Advantages of silicon in power and electronics devices (diodes, transistors, and thyristors, etc.) in comparison to germanium were evident, so since 1957 PCMP has been producing only single-crystal silicon. The technology and equipment for PCMP are created by Giredmet Institute (Moscow, Russia), who is a permanent designer for the Works during the whole of its history.
In order to support its single-crystal silicon production, PCMP created its own production of polycrystalline silicon in 1957 and synthetic quartz crucibles in 1961. It is worthwhile to say, the crucibles technology based on vapour-phase hydrolysis of silicon tetrachloride in oxyhydrogen burner provides the highest purity of crucibles in the world. Drawback of the technology is insufficient repeatability of crucibles geometry and environmental problems with disposal of chlorinated gas. Besides, this technology has limitation regarding diameter of the produced crucibles (up to 406 mm). Since the year of 2005, PCMP uses only arc fusion technology to produce crucibles from quartz grain.
Increase of demand by growing electronic and electrical industries required appropriate extension of single-crystal silicon production. PCMP exists in permanent reconstructions, implementation of state-of the-art and more effective equipment for silicone newer quality. Diameter of silicon ingots was increased from originally 30 mm to 40, 60, 80, 100 and today up to 220 mm.
Production of integrated circuits in USSR toughened requirements to single-crystal silicon regarding alkali and heavy metals content, micro defects in crystal lattice, homogeneity of bulk electro physical properties. The Works staff successfully coped with the tasks. Large-scale scientific activities, also together with Giredmet Institute, provided leading positions of PCMP among producers of the same profile in USSR (Svetlovodsky Zavod chisty'h metallov, Zaporozhskij titano-magnievy'j kombinat (ZTMK), Krasnoyarsk Non-Ferrous Metals Plant (Krastsvetmet), Kirghiz mining-and-metallurgical integrated works).
During the period of time from 1968 to 1984, PCMP produced epitaxial silicon structures, types pp+, pn+, nn+ pn, for integrated circuits with quality being target level for other producers of epitaxial structures. But development of microelectronics industry with its own facilities to produce epitaxial structures, and continuous growth of demand in single-crystal silicone became reason for termination of epitaxial production at PCMP in 1984 and contemporaneous commissioning of new facilities to redouble production of single-crystal silicon. Previously, in 1981, PCMP put into operation the largest facilities at that time in USSR for polycrystalline silicon production to cover its own needs and taking into consideration demand of other consumers for future development.
Production of diffused p-n junctions on silicon wafers for transistors existed at PCMP much longer than production of epitaxial structures (from 1969 to 1994).
From 1966 and till conversion of the defense enterprises (1992), PCMP implemented technology of extra-pure antimony, indium, monocrystalline indium antimonide, p-n junctions on its basis. This products were used in night vision equipment.
Also since 1996, the Works produced silicon carbide for light-emitting diodes. Nevertheless, market of these products shrank in the 80’s and production was closed because of high costs.
PCMP applied two technologies for single-crystal silicon production, i.e. Czochralski (CZ) method and crucible less floating-zone method. Cz-silicone was used mainly in electronics and floating-zone silicon was used in electro technical industry.
It is to be highlighted, specialists of PCMP worked in close co-operation with customers to consider carefully details of semiconductor devices technologies to optimize silicone quality and give sometimes their recommendations to semiconductors producers. An unprecedented fact is current in the history when PCMP mastered production of diodes and thyristors for electric locomotives which production just started in USSR. Later, the electro technical industry began their production at its own facilities.
Development of relations with INTEGRAL Research and Production Corporation (Minsk, Belarus) may be mentioned as an example of working partnership with customers. Joint efforts provided quality of integrated circuits by the enterprise, comparable to international level. INTEGRAL received up to 40% of single-crystal silicone produced at PCMP. Also, integrated end-to-end cost accounting was studied from silicon production to production of integrated circuits.
When power transmission lines in USSR were converted from alternate to direct current (the years of 80’s) there was a problem to make high-voltage thyristors with large p-n junctions and high homogeneous of resistivity distribution. PCMP was one of the first who implemented technology of neutron transmutation doped silicone featuring required properties. Neutron irradiation of the silicon was done at enterprises having nuclear reactors at their disposal.
In the years 90’s, PCMP created its own original process to produce unconventionally doped silicon. Instead of high-resistance silicon received by floating zone process, cheaper silicon was suggested for use, i.e. Cz-silicon, where specified resistance at transistor base is obtained by thermal doping effect. Technology of transistors fabrication from such silicon was revised and improved with participation of PCMP specialists. The transistors featured better quality at significantly lower cost.
After 1992, PCMP supplies portfolio was subject of reduction due to conversion of defense enterprises. Production of antimony, indium, and indium antimonide was ceased. Supplies of trichlorsilane, a raw material for polycrystalline silicon, were also stopped. As a result, production of polycrystalline silicon was suspended and later closed in 2000. PCMP output decreased by twice in 1996.
In these circumstances, PCMP could establish new relations with foreign customers, having suggested solar grade single-crystal silicon to the world market. Actual level of single-crystal silicon production for electronic industry allowed production of high quality “solar” silicon. Smart marketing, financial and technological policy of the new administration leading the Works since 2000, allowed PCMP to take a firm position in the world market and become one of largest producers of solar grade silicon in 2004.
At present, in view of the world market demands as to quality so to quantity of single-crystal silicon for solar industry, PCMP is retrofitting silicon growing equipment to raise its output and get ingots with diameter 200 mm. For this purpose, PCMP in a friendly co-operation with Russian enterprises designed a new single-crystal silicon puller PCMP CZ1500/250.
The Works mastered in 2000 and continuously extends production of sliced single-crystal silicon wafers. Since 2004, sliced wafers amount to 50% of PCMP products. Foreign cutting equipment made by HCT company (Switzerland) and Themis (Czech Republic) is used to slice the wafers.
Since 2003 PCMP produces some amount of photovoltaic converters in Orel (Russia).
