Description
The single crystalline silicon of semiconductor grade is grown by the Czochralski metodOptions
| Parameter | Specification |
| Diameter,mm/inch | 78-200/3-8 |
| Conductivivty type,dopant | P/Boron; N/Phosphorus |
| Ingot orientation | <100>; <111>; <110>; <013> |
| Off-orientation,degrees | <2 |
| Resistivity,Ohm*cm | 0,1-50(N), 0.005-80(P) |
| Radial resistivity variation,% |
<10 (N), < 8 (P) |
| Carbon content,cm-3 (ppma) |
<2,5 x 1016
(0,3)
|
| Oxygen content,cm -3 (ppma) |
<9x1017 (18) for dia. 150 mm <10x1017 (20) for dia. 200 mm |
| Dislocation density, cm-2 | <10 |
| Lifetime, µsec | >4ρ |
| Ingot length, mm | up to 800 |
