Description
The single crystalline silicon of solar grade is grown by the Czochralski metod
Options
| Parameter | Specification |
| Diameter,mm |
100-200 (4-8") |
| Conduktivity type |
p - Boron n - Phosphorus |
| Ingot orientation |
<100> <111> |
| Off-orientation, degrees |
3 |
| Resistivity, Ohm x sm |
0,5 - 20,0 |
| Radial resistivity variation, % |
< 8 |
| Carbon content, sm-3 (ppma) |
<5x1016 (1 ) |
| Oxygen content, sm-3 ( ppma) |
<9x1017 (18) |
| Dislokation density , sm-2 |
<10 |
| Lifetime, mcsec |
>25 |
| Ingot length, mm |
up to 800 |
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